Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Vishay Siliconix |
VBT1045C-E3
|
90Kb / 4P |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
Revision: 09-Sep-13 |
VFT1045C-M3
|
88Kb / 4P |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
Revision: 22-Nov-13 |
VBT1045C-M3
|
102Kb / 4P |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A
Revision: 30-Apr-13 |
VE1045C-E3
|
133Kb / 4P |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 2.5 A
Revision: 20-Dec-13 |
VT10200C-M3
|
158Kb / 4P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 01-Dec-16 |
VT5200
|
148Kb / 5P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 14-Aug-13 |
VT5200-E3
|
146Kb / 6P |
Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
Revision: 12-Dec-16 |
VBT1060C-M3
|
89Kb / 4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
Revision: 14-May-13 |
VT1060C-E3
|
156Kb / 6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
Revision: 14-Dec-16 |
VB10170C-E3
|
93Kb / 4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A
Revision: 03-Jan-17 |