Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Samsung semiconductor |
IRFS641
|
308Kb / 5P |
Improved inductive ruggedness
|
Bruckewell Technology L... |
MS85N06
|
725Kb / 3P |
Improved dv/dt Capability, High Ruggedness
|
MS75N075
|
441Kb / 4P |
Improved dv/dt Capability, High Ruggedness
|
International Rectifier |
IRFP4137PBF
|
389Kb / 8P |
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
|
Advanced Semiconductor |
HVV1011-1000L
|
376Kb / 3P |
Excellent Ruggedness
|
HVV0405-1000
|
353Kb / 3P |
Excellent Ruggedness
|
Littelfuse |
MG12105S-BA1MM
|
1Mb / 6P |
High Ruggedness
|
Advanced Semiconductor |
HVV1011-180L
|
524Kb / 3P |
Excellent Ruggedness
|
STMicroelectronics |
STL86N3LLH6AG
|
1,009Kb / 16P |
High avalanche ruggedness
February 2015 Rev 3 |
STL220N6F7
|
744Kb / 13P |
High avalanche ruggedness
|